Regensburg 2019 – wissenschaftliches Programm
HL 45.45: Poster
Donnerstag, 4. April 2019, 18:30–21:00, Poster E
Line shapes in Raman spectroscopy of amorphous semiconductors — •priyanka Yogi1, priyanka yogi1, and Rajesh Kumar2 — 1Institut für Festkörperphysik, ATMOS, Leibniz Universität Hannover Appelstr. 2, D-30167 Hannover, Germany — 2Material Research Laboratory, Discipline of Physics & MEMS, Indian Institute of Technology Indore, Simrol-453552, India
The theoretical analysis of line shapes of Raman scattering data from amorphous semiconductors like silicon, germanium etc. turned out to contain important information about short range order correlations and size distributions of local nanocrystals formed. For that purpose, an existing modified phonon confinement model (MPCM) is used to analyze the Raman scattering data of amorphous semiconducting materials. A MPCM includes two main conventions namely phonon momentum conservation and shift in zone centre phonon frequency. These two factors were amalgamated to generate the theoretical Raman line-shape that was fitted to experimentally observed Raman spectra of amorphous materials. Experimentally observed Raman scattering data of amorphous materials which are prepared by different techniques are well fitted, and has been used to quantify the distance of short-range order. It can be established that the Raman line-shape obtained within the framework of MPCM is a close representative Raman line-shape of amorphous semiconducting materials. The quantification of the degree of order may prove to be scientifically and technologically important to enhance the efficiency of solar cells of amorphous materials such as amorphous silicon solar cells etc.