Regensburg 2019 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 45: HL Posters III

HL 45.46: Poster

Donnerstag, 4. April 2019, 18:30–21:00, Poster E

Nonequilibrium Resonance in Quantum Dots without Electronic Wetting Layer States — •Ibrahim A. Engin, Ismail Bölükbasi, Sven Scholz, Andreas D. Wieck, and Arne Ludwig — Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum, D-44780 Bochum, Germany

Self assambled InAs quantum dots (SAQD) proved promising semiconductor structures as single photon sources.

We investigate electronic resonances in illuminated InAs SAQDs by using C(V)-spectroscopy. With constant illumination of SAQDs metastable hole states can be created [1]. Furthermore, non-equilibrium states have been observed by increased illumination or tunnel barrier length [2].

SAQDs are grown inevitably with a wetting layer (WL), which interferes with the SAQD observation by affecting the photon emission spectrum of quantum dots. Here we modify the growth of SAQDs by adding a monolayer of AlAs on the quantum dots to suppress electronic WL-states [3] by more than 30dB and study non-equilibrium electron resonances.

[1] Labud, P. et al., "Direct Quantitative Electrical Measurement of Many-Body Interactions in Exciton Complexes in InAs Quantum Dots", Phys. Rev. Lett. 112 (2014), 046803

[2] Valentin, S. et al., "Illumination-induced nonequilibrium charge states in self-assembled quantum dots", Phys. Rev. B 97 (2018), 045416

[3] Löbl, M. et al., "Excitons in InGaAs Quantum Dots without Electron Wetting Layer States", eprint arXiv:1810.00891 (2018)