Regensburg 2019 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 45: HL Posters III

HL 45.47: Poster

Donnerstag, 4. April 2019, 18:30–21:00, Poster E

Pseudomorphic strain in corundum-phase Al-rich (Al,Ga)2O3 thin films grown on R-plane sapphire — •Marius Grundmann, Michael Lorenz, Stefan Hohenberger, and Eduard Rose — Universität Leipzig, Felix-Bloch-Institut für Festkörperphysik, Linnéstr. 5, 04103 Leipzig

We present the theory of pseudomorphic elastic continuum strain for heterostructures for rhombohedral/trigonal materials for arbitrary orientation of the epitaxial plane [1]. For C14=0 it degenerates to the theory for hexagonal (wurtzite) materials. We test the theory for atomically smooth, pseudomorphic α-(Al1−xGax)2O3 (0 ≤ x < 0.08) thin films grown on R-plane sapphire (01.2) by pulsed laser deposition at growth temperatures up to 1,000C. A careful analysis of lattice constants and tilt from 13 symmetric, skew-symmetric and asymmetric X-ray peaks agrees quite well with the strain theory [2]. The Ga-contents x and weak deviations from the expected ratio of rhombohedral/hexagonal c/a lattice constants are obtained from best fits of the spacing of the (02.4), (04.8), and (00.6), (00.12) film and substrate reflections, in reasonable agreement with chemical EDX analyses.
M. Grundmann, J. Appl. Phys. 124(18), 185302:1-10 (2018).
M. Lorenz, S. Hohenberger, E. Rose, M. Grundmann, Appl. Phys. Lett., accepted (2018).

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