Regensburg 2019 – wissenschaftliches Programm
HL 45.51: Poster
Donnerstag, 4. April 2019, 18:30–21:00, Poster E
Tuning of material properties of ZnMgON by cationic substitution — •Antonia Welk1, Anna Reinhardt1, Holger von Wenckstern1, Marius Grundmann1, Thorsten Schultz2, and Norbert Koch2 — 1Felix-Bloch-Institut für Festkörperphysik, Universität Leipzig, Linnéstraße 5, 04103 Leipzig, Germany — 2Institut für Physik, Humboldt-Universität zu Berlin, Brook-Taylor-Straße 6, 12489 Berlin, Germany
Amorphous zinc oxynitride (a-ZnON) with Hall mobilities up to 100 cm2V−1s−1  is a promising low-temperature deposition channel material for thin film transistors (TFTs). In order to fabricate transparent devices we suggested to add magnesium as an additional cation to a-ZnON to increase the mobility gap of 1.3 eV and to reduce the charge carrier concentration to 1017 cm−3 or below.
We deposited ZnMgON thin films by reactive magnetron co-sputtering. In general, an increased magnesium content leads to a profound decrease in charge carrier concentration, an absorption edge shift to higher energies and a decrease in Hall mobility. However, some films do not show a systematic decrease of the charge carrier concentration. XPS and temperature dependent Hall measurements were applied to correlate differences in chemical bonding configuration with different electrical transport properties.
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