Regensburg 2019 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 45: HL Posters III

HL 45.55: Poster

Donnerstag, 4. April 2019, 18:30–21:00, Poster E

Structural, Optical and Electrical Properties of Si- and Zr-Doped κ-(InxGa1−x)2O3 Thin Films — •Catharina Krömmelbein, Anna Hassa, Daniel Splith, Max Kneiß, Holger von Wenckstern, and Marius Grundmann — Universität Leipzig, Felix-Bloch-Institut für Festkörperphysik, Linnéstraße 5, 04103 Leipzig, Germany

The orthorhombic polymorph of the wide band-gap semiconductor Ga2O3 has a predicted large spontaneous polarization of 23 µC/cm2 [1]. At the interface of κ-Ga2O3-based, ternary heterostructures occurs a discontinuous change of the polarization leading to a charge accumulation that can potentially be exploited in high-electron mobility transistors. Therefore, it is crucial to determine deposition conditions allowing growth of ternary layers with tailored material properties.

In this study, we present κ-(InxGa1−x)2O3 thin films prepared on c-sapphire substrates by pulsed laser deposition doped with Si or Zr to improve electrical conductivity. We added tin to induce the growth of the orthorhombic phase [2]. Resulting thin films were investigated by means of energy-dispersive X-ray spectroscopy, X-ray diffraction, atomic force microscopy, transmission, and Hall effect measurements. Further, Schottky barrier diodes were studied at room temperature by current-voltage measurements.

[1] M. Orita et al., Thin Solid Films 411, 134-139 (2002)

[2] M. Kracht et al., Phys. Rev. Appl. 8, 054002 (2017)

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