Regensburg 2019 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 45: HL Posters III

HL 45.58: Poster

Donnerstag, 4. April 2019, 18:30–21:00, Poster E

PLD-growth of epitaxial κ-(Inx,Ga1−x)2O3/κ-Ga2O3 heterostructures — •Max Kneiss, Anna Hassa, Daniel Splith, Holger von Wenckstern, Michael Lorenz, and Marius Grundmann — Universität Leipzig, Felix-Bloch-Institut für Festkörperphysik, Leipzig, Germany

Ga2O3 in the metastable κ-phase has recently gained remarkable interest. Like the monoclinic β-modification, it features a high Eg of ≈5 eV [1] and the possibility of alloying with Al2O3 or In2O3 for bandgap engineering. However, κ-Ga2O3 is additionally expected to possess a high spontaneous electric polarization along its c-direction [2]. Polarization differences at heterointerfaces can be utilized to achieve high electron densities in a 2DEG located at the interface. For high quality heterostructures, epitaxial growth of e.g. κ-(Inx,Ga1−x)2O3 on κ-Ga2O3 templates and vice versa is necessary. We demonstrate epitaxial growth of (001)-oriented κ-(Inx,Ga1−x)2O3 layers with various In-concentrations x on κ-Ga2O3 thin film templates fabricated by pulsed laser deposition (PLD) employing elliptically-segmented and Sn-doped (Inx,Ga1−x)2O3/Ga2O3 targets (VCCS-PLD [3]). Additionally, a κ-Ga2O3/κ-(Inx,Ga1−x)2O3/κ-Ga2O3 double heterostructure was investigated. Epitaxial growth on the κ-Ga2O3 template and its epitaxial relationship with various substrates were determined by XRD; AFM measurements reveal smooth surfaces.
J. Furthmüller et al., Phys. Rev. B 93, 115204 (2016)
M. B. Maccioni et al., Appl. Phys. Expr. 9, 041102 (2016)
M. Kneiß et al., ACS Comb. Sc. 20, 643 (2018)

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