Regensburg 2019 – wissenschaftliches Programm
HL 45.59: Poster
Donnerstag, 4. April 2019, 18:30–21:00, Poster E
Gasadsorbtion of epitaxial thin β-Ga2O3 layers — •Martin Handwerg1, Robin Ahrling1, Rüdiger Mitdank1, Günter Wagner2, Zbigniew Galazka2, and Saskia F. Fischer1 — 1Novel Materials Group, Humboldt-Universität zu Berlin, 10099 Berlin, Germany — 2Leibniz Institute for Crystal Growth, 12489 Berlin, Germany
The transparent conductive oxide β-Ga2O3 is of huge interest for high power electronics and optoelectronics because of its high band gap (EG≈ 4.8 eV) and breakthrough voltage.
Due to the surface electron accumulation layer β-Ga2O3 has possible gas sensing application as well.
To date only gas sensing mechanics at high temperatures several hundred degree above room temperature could be found.
Here, we investigate the dependence of the conductivity from the atmospheric conditions at room temperature. We used thin homoepitaxially MOCVD grown films of β-Ga2O3 which are silicon doped. We show, that pressure and atmospheric composition have influence on the conductivity of very thin films with a thickness t<30 nm . Van-der-Pauw and Hall-measurements in relation to nitrogen and oxygen content and pressure of the atmosphere were used. Additionally, the time dependence and the recovery rate of the conductivity change is investigated and discussed.