Regensburg 2019 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 45: HL Posters III

HL 45.60: Poster

Donnerstag, 4. April 2019, 18:30–21:00, Poster E

Optimizing the sputter deposition process of amorphous zinc oxynitride thin filmsAnna Reinhardt1, •Antonia Welk1, Holger von Wenckstern1, Marius Grundmann1, Thorsten Schultz2, and Norbert Koch21Universität Leipzig, Felix-Bloch-Institut für Festkörperphysik, Semiconductor Physics Group — 2Humboldt-Universität zu Berlin, Institut für Physik

Amorphous zinc oxynitride (a-ZnON) was demonstrated to be a promising high-mobility semiconductor for low-temperature fabricated, high-performance thin-film transistors, whereby reactive sputtering with two reactive gases (O2 and N2) either in RF or DC mode is the method of choice for thin film deposition [1–3]. However, the reported electron mobility values for a-ZnON span a wide range of 20 – 120 cm2V−1s−1. Due to the complexity of the reactive sputtering process a profound knowledge of the relations between sputter parameters and film properties is nescessary to optimize the latter. We investigated in detail the influence of the sputtering mode and parameters on the electrical properties of a-ZnON thin films. We found that the achievable electron mobility is directly linked to the discharge voltage which can be tuned by applying an additional negative substrate bias. Furthermore, the effect of N2-plasma-assistence during sputtering process was analyzed regarding the chemical bonding states by means of depth-profiling XPS measurements.

[1] Y. Ye et al., J. Appl. Phys. 106, 074512 (2009)

[2] H.-S. Kim et al., Sci. rep. 3, 1459 (2013)

[3] A. Reinhardt et al., Phys. Status Solidi A 213 (7), 1767 (2016)

100% | Mobil-Ansicht | English Version | Kontakt/Impressum/Datenschutz
DPG-Physik > DPG-Verhandlungen > 2019 > Regensburg