Regensburg 2019 – wissenschaftliches Programm
HL 45.61: Poster
Donnerstag, 4. April 2019, 18:30–21:00, Poster E
X-ray Photoelectron Spectroscopy of Gallium-Sesquioxide — •Sebastian L. Benz1, Martin Becker1, Philipp Schurig1, Max Kracht1, Fabian Michel1, Alexander Karg2, Martin Eickhoff2, and Angelika Polity1 — 1Institute for Exp. Physics I and Center for Materials Research (LaMa), Justus Liebig University Giessen, Germany — 2Institute of Solid State Physics - Semiconductor Epitaxy - University of Bremen, Germany
X-ray Photoelectron Spectroscopy is used to characterize Ga2O3 thin films (β- and є-phase) grown by different synthesis methods. Particularly, the provided thin films were prepared by plasma-assisted molecular beam epitaxy, an adapted pulsed sputtering method and ion-beam sputter deposition. All thin films share a gallium excess independent of the specific growth method. However, for a stoichiometric template, grown by edge-defined film-fed growth, it is found that the characterization with X-ray Photoelectron Spectroscopy leads to an overestimation of the Ga concentration of about 6 at%. It is believed that this result can be explained by the effect of preferential sputtering. A correction factor is determined to adjust the data of Ga2O3 thin films. As a consequence, all mentioned growth methods are capable to produce stoichiometric Ga2O3.