Regensburg 2019 – wissenschaftliches Programm
HL 45.64: Poster
Donnerstag, 4. April 2019, 18:30–21:00, Poster E
Investigation of the effect of FIB processing on the surface recombination velocity of semiconductor TEM lamellas — •Christopher Wendeln, Arne Ahrens, and Michael Seibt — IV. Physical Institute of Georg-August University, Göttingen, Germany
‘Dead layers’ are electrically damaged regions occurring at the surfaces of processed samples and are considered as recombination centers for electrons and holes. The effect of a dead layer on the properties of a material increases with decreasing size since surface-near regions make up a significant proportion of the sample. Thus, electrical measurements on the nanoscale are affected due to the position of the dead layers at the surfaces. Examples are electron beam induced current (EBIC) measurements  and electron holography  in transmission electron microscopes (TEM). The preparation of TEM lamellas with a focused ion beam (FIB) can cause dead layers to emerge and to disturb the EBIC measurements on that system. Unfortunately, the influence of sample preparation on the formation and thickness of dead layers is not well understood. In this work EBIC investigations of differently FIB-prepared cross sections of an Au/n-Si Schottky contact were conducted to provide insights about the existence and formation of dead layers.
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