Regensburg 2019 – wissenschaftliches Programm
HL 45.68: Poster
Donnerstag, 4. April 2019, 18:30–21:00, Poster E
Short wavelength InGaAs quantum dots grown via droplet epitaxy — •David Fricker1,3, Paola Atkinson5, András Kovás4, Mihail Lepsa2,3, Detlev Grützmacher1,2,3, and Beata Kardynal1,3 — 1Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, Germany — 2Peter Grünberg Institute (PGI-10), Forschungszentrum Jülich, Germany — 3JARA - Fundamentals of Future Information Technology, RWTH-Aachen University, Germany — 4Ernst Ruska-Centre, Forschungszentrum Jülich, Germany — 5Institut des NanoSciences de Paris, CNRS UMR 7588, Sorbonne Université, France
Epitaxial In(Ga)As quantum dots in GaAs, typically grown by the Stranski-Krastanov growth mode, have been used in solid state quantum optics experiments for over a decade as the basic building blocks of single and entangled photon sources and as hosts for spin qubits. Here we investigate an alternative method of growing these dots based on low temperature droplet epitaxy, which may allow a higher degree of control over dot density and dot wavelength as well as allowing dots without an underlying wetting layer to be grown. The structure and optical properties of the grown quantum dots were studied using atomic force microscopy, transmission electron microscopy and microphotoluminescence, respectively. We show the effect of deposition amount of Ga and In on the droplet size, droplet density and dot emission wavelength. Finally, we discuss the influence of the capping temperature on the physical presence of the wetting layer and the corresponding intensity of photoluminescence.