Regensburg 2019 – wissenschaftliches Programm
HL 5.11: Vortrag
Montag, 1. April 2019, 12:15–12:30, H36
Top-down fabrication of gate-tuneable bulk-insulating TI nanowires and their quantum transport — •Matthias Rößler, Dingxun Fan, Oliver Breunig, Andrea Bliesener, Gertjan Lippertz, Alexey Taskin, and Yoichi Ando — II. Physikalisches Institut, Universität zu Köln, Zülpicher Str. 77, D-50937 Köln, Germany
With proximity-induced superconductivity, bulk-insulating topological insulator nanowires (TI NWs) are expected to serve as a robust platform for realizing Majorana bound states. When exploiting their non-Abelian exchange statistics, these could enable realizations of topological quantum computation schemes. In previous reports, however, manipulation of naturally- or MBE-grown TI NWs limited possible device layouts and finite bulk transport contribution yet showed potential for improvements.
We have been performing fabrication and optimization of bulk-insulating TI NWs based on a scalable approach, namely etching of MBE-grown high quality (Bi1−xSbx)2Te3 thin films. Magneto-transport measurements have been carried out to characterize the NWs properties, showing that the quality of the pristine material can be maintained during fabrication. Using this technique, highly gate-tuneable bulk insulating TI NWs with a diameter of less than 100 nm can be prepared to form arbitrary networks, which will be utilized to study proximity-induced superconductivity in more complex devices layouts.