Regensburg 2019 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 5: Topological insulators
HL 5.4: Vortrag
Montag, 1. April 2019, 10:15–10:30, H36
Band structure of the 2D HgTe quantum well from the cyclotron resonance — •Jan Gospodaric1, Alexey Shuvaev1, Vlad Dziom1, Andrei Pimenov1, Alena Dobretsova2, Elena Novik3, Nikolay Nikolaevich Mikhailov2, and Ze Don Kvon2 — 1Institute of Solid State Physics, Vienna University of Technology, 1040 Vienna, Austria — 2Rzhanov Institute of Semiconductor Physics and Novosibirsk State University, Novosibirsk 630090, Russia — 3Institute of Theoretical Physics, Technische Universität Dresden, 01062 Dresden, Germany
One of the most standardised and prominent methods to acquire the band structure of solids is provided by angle-resolved photoemission spectroscopy (ARPES). However, access to the electronic structure of thin film materials with a surrounding layered structure by ARPES is limited since the technique only allows investigation of the area close to the surface of the sample (typical depths in Ångström range). Here we present one the alternative method to obtain insight into the band dispersion of such samples by probing the cyclotron resonance of the free carriers in a thin film of three-dimensional topological insulator HgTe. Specifically, we applied our measuring procedure to a strained 80 nm thick HgTe quantum well, which is insulating in the bulk and is characterised by a 2D surface electron gas with a Dirac-like dispersion. With present technique we can map both the electron as well as the hole part of the band structure. The resulting band picture agrees reasonably well with theoretical predictions.