Regensburg 2019 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 9: Focus Session: Oxide Semiconductors for Novel Devices II

HL 9.1: Vortrag

Montag, 1. April 2019, 15:00–15:15, H34

Tin-assisted PLD-growth of epitaxial κ-Ga2O3 thin films — •M. Kneiss1, A. Hassa1, D. Splith1, C. Sturm1, H. von Wenckstern1, M. Lorenz1, T. Schultz2, N. Koch2, and M. Grundmann11Universität Leipzig, Felix-Bloch-Institut für Festkörperphysik — 2Humboldt Universität zu Berlin, Institut für Physik

Among the polymorphs of Ga2O3, the orthorhombic κ-phase features some outstanding properties. In contrast to the monoclinic β-modification, it is expected to possess a large spontaneous electrical polarization of 23 µC/cm2 [1], while still exhibiting a high Eg of ≈5 eV [2]. Alloying with Al2O3 or In2O3 further enables band gap as well as polarization engineering, such that heterointerfaces can be utilized to localize high electron densities in a 2DEG. To create high quality heterostructures, epitaxial growth of κ-Ga2O3 with high crystalline quality and smooth surfaces is necessary. We show the growth of κ-Ga2O3 (001) with well-defined in-plane epitaxial relationships on Al2O3 (00.1), STO (111), YSZ (111) and MgO (111) substrates by pulsed laser deposition (PLD). A Sn-doped Ga2O3 PLD-target was used to catalyze the κ-phase [3]. The growth in this phase, epitaxial relationships and a high crystalline quality were verified by XRD, while AFM measurements reveal smooth surface morphology. We propose surfactant-mediated epitaxy as possible growth mechanism [4].
M. B. Maccioni et al., Appl. Phys. Expr. 9, 041102 (2016)
J. Furthmüller et al., Phys. Rev. B 93, 115204 (2016)
M. Orita et al., Thin Solid Films 411, 134 (2017)
M. Kneiß et al., APL Materials, Accepted (2018)

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