Regensburg 2019 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 9: Focus Session: Oxide Semiconductors for Novel Devices II

HL 9.4: Vortrag

Montag, 1. April 2019, 15:45–16:00, H34

Properties of the β-Ga2O3(1 0 0) surface — •Jonathan K. Hofmann1, Celina S. Schulze1, Wjatscheslav Martyanov1, Martin Franz1, Zbigniew Galazka2, and Holger Eisele11Technische Universität Berlin, Institut für Festkörperphysik, Germany — 2Leibniz-Institut für Kristallzüchtung, Germany

β-Ga2O3 is a wide band gap material showing n-type conductivity. The electrical conductivity of β-Ga2O3 can be controlled by growth environment, intentional doping, or post-growth heat treatment. Due to its large band gap of 4.85 eV, β-Ga2O3 is a promising material for high power electronics and UV optoelectronics.

The β-Ga2O3 single crystals were grown from the melt by the Czochralski method [1] and show good conductivity. For the present study, a sample was cleaved in UHV and the (1 0 0) surface was investigated with low energy electron diffraction (LEED) and scanning tunnelling microscopy/spectroscopy (STM/STS). The LEED-patterns show the unreconstructed (1 0 0) surface. STM images with atomic resolution display an atomically flat surface with dark contrasts. These dark contrasts are likely induced by oxygen vacancies below the surface. STS reveals an electronic state 1.5 eV below the conduction band minimum. This state is probably induced by the (+2/0) transition level of the oxygen vacancies.

The project was supported by the Leibniz Association, Leibniz Science Campus GraFOX, project C2-3.

[1] Z. Galazka et al., ECS J. Solid State Sci. Technol. 6, Q3007 (2017).

100% | Mobil-Ansicht | English Version | Kontakt/Impressum/Datenschutz
DPG-Physik > DPG-Verhandlungen > 2019 > Regensburg