Regensburg 2019 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 9: Focus Session: Oxide Semiconductors for Novel Devices II

HL 9.6: Vortrag

Montag, 1. April 2019, 16:15–16:30, H34

Ion beam Doped Transparent Conductive Oxides for Metasurfaces — •Alexander Koch, Jura Rensberg, Martin Hafermann, and Carsten Ronning — Institute of Solid State Physics, Friedrich Schiller University Jena, Germany

Transparent conductive oxides have recently gained a lot of attention for applications in plasmonics and nanophotonics due to their low optical loss, metal-like behavior, tailorable optical properties, and well established fabrication procedures. In particular, n-type doped zinc oxide (ZnO), such as aluminum doped ZnO (AZO), is very attractive because its dielectric permittivity can be precisely engineered over a broad range in the near-IR and IR regime via its doping level. Here, we show that a very high doping concentration in ZnO can be achieved by ion implantation and post implantation annealing treatments. Furthermore, ion implantation offers the great opportunity of area selective doping using either focused ion beams or appropriate lithography techniques in combination with ion implantation. By this means, metasurfaces can be fabricated, which are composed of subwavelength sized structure elements possessing high optical contrast.