Regensburg 2019 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 35: 2D Materials I: Growth and Properties of Transition Metal Dichalcogenides, Phase Transitions
O 35.1: Vortrag
Dienstag, 2. April 2019, 14:00–14:15, H14
The unoccupied electronic structure of 2H tungsten disulfide — •Lukas Musiol, Philipp Eickholt, and Markus Donath — Westfälische-Wilhelms-Universität Münster, Germany
In the field of 2D materials, single-layer transition metal dichalcogenides, especially MoS2, WS2, MoSe2, and WSe2, play an important role. Due to their exceptional optical and electronic properties, they are promising materials for optoelectronical applications. The key to understanding the material properties is a profound knowledge of the electronic structure. Because freestanding single layers cannot be prepared, experiments are conducted on single layers deposited on a substrate. While the spin structure of the occupied and unoccupied K valleys was investigated for WS2/Au(111) [1], the influence of the Au(111) substrate is not known in detail.
We present an angle-resolved inverse-photoemission [2,3] study of 2H-WS2. By comparison with data of single-layer WS2/Au(111), the influence of the Au(111) substrate is extracted.
[1] P. Eickholt et al., Phys. Rev. Lett. 121, 136402 (2018)
[2] M. Budke et al., Rev. Sci. Instrum. 78, 113109 (2007)
[3] S.D. Stolwijk et al., Rev. Sci. Instrum. 85, 013306 (2014)