Regensburg 2019 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 35: 2D Materials I: Growth and Properties of Transition Metal Dichalcogenides, Phase Transitions
O 35.7: Vortrag
Dienstag, 2. April 2019, 15:30–15:45, H14
Controlled growth of transition metal dichalcogenide monolayers using Knudsen-type effusion cells for the precursors — •Antony George1, Christof Neumann1, David Kaiser1, Rajeshkumar Mupparapu1, Tibor Lehnert2, Uwe Hübner3, Zian Tang1, Andreas Winter1, Ute Kaiser2, Isabelle Staude1, and Andrey Turchanin1 — 1Friedrich Schiller University Jena, Institute of Physical Chemistry, 07743 Jena, Germany — 2Ulm University, Central Facility of Materials Science Electron Microscopy, 89081 Ulm, Germany — 3Leibniz Institute of Photonic Technology, 07745 Jena, Germany
Controlling the flow rate of precursors is essential for the growth of high quality monolayer single crystals of transition metal dichalcogenides (TMDs) by chemical vapor deposition. Thus, introduction of an excess amount of the precursors affects reproducibility of the growth process and results in the formation of TMD multilayers and other unwanted deposits. Here we present a simple method for controlling the precursor flow rates using the Knudsen-type effusion cells. This method results in a highly reproducible growth of large area and high density TMD monolayers. The size of the grown crystals can be adjusted between 10 and 200 µm. We characterized the grown MoS2 and WS2 monolayers by optical, atomic force and transmission electron microscopies as well as by Raman and photoluminescence spectroscopies, and by electrical transport measurements showing their high optical and electronic quality based on the single crystalline nature.