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O: Fachverband Oberflächenphysik
O 47: Poster Tuesday: Scanning Probe Techniques
O 47.9: Poster
Dienstag, 2. April 2019, 18:00–20:00, Poster D
dS11/dV spectroscopy and imaging of buried nanostructures — •Alexander Kölker1,3, Georg Gramse2,4, Matthias Koch3, Ferry Kienberger4, and Neil Curson1 — 1London Centre of Nanotechnology, UCL, London, UK — 2Johannes Kepler University, Biophysics Institute, Linz, Austria — 3Fritz-Haber-Institut der Max-Planck-Gesellschaft, Berlin, Germany — 4Keysight Laboratories, Keysight Technologies, Inc.,Linz, Austria
Non-destructive device characterization is especially of interest when including newly emerging materials like δ-layers, nanowires, graphene or spintronics in the fabrication processes. Scanning microwave microscopy (SMM) is a non-destructive technique that allows advanced characterization of electrical properties, such as carrier concentration, capacitance and conductivity, by measuring the reflected signal power (S11) of an electro magnetic wave guided to the AFM tip [1].
Further information, such as capacitance and conductance derivative (dC/dV and dG/dV) can be extracted by exploiting the field effect of a DC bias, applied in addition to the low RF signal to the tip.
Here we demonstrate for buried δ-layer nanostructures how dS11/dV spectroscopy in conjunction with FEM-modelling can be employed to identify contributions to the admittance that originate from the substrate, the patterned δ-layer region and its 2D nature. In the outlook we report on the development of a novel SPM sample that hosts an integrated circuit for in-situ single-molecule charge transport measurements. [1] G. Gramse, A. Kölker et al. Science Advances, vol. 3, no. 6, p. e1602586, 2017.