Regensburg 2019 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 87: 2D Materials IV: Charge Density Waves and Electronic Properties
O 87.9: Vortrag
Donnerstag, 4. April 2019, 17:00–17:15, H25
Coulomb engineering of two-dimensional Mott insulators — •Erik van Loon1, Malte Schüler1, Daniel Springer2, Jan Tomczak2, Giorgio Sangiovanni3, and Tim Wehling1 — 1Universität Bremen, Bremen, Deutschland — 2TU Wien, Wien, Österreich — 3Julius-Maximilians-Universität Würzburg, Würzburg, Deutschland
Substrates provide a convenient tool for manipulating two-dimensional materials. One way the substrate affects the material is via the screening of the Coulomb interaction. Here, we investigate the impact of this substrate screening on two-dimensional Mott (that is: Coulomb interaction-driven) insulators. This requires a theoretical description of the interplay of internal and external screening and correlation. We address the metal-insulator transition in the presence of substrate screening and how the size of the gap is altered.