Regensburg 2019 – scientific programme
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4364 results on 437 pages: 1 … 84 85 86 87 88 … 437
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Mon, 15:45 | DS 7.4 | Optical properties along the pseudo-binary line between Bi2Se3 and Sb2Se3 — •Ludovica Guarneri, Stefan Maier, and Matthias Wuttig |
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Mon, 16:00 | DS 7.5 | Tailoring the optical properties of atomically-thin tungsten disulfide via ion irradiation — •Linan Ma, Yang Tan, Mahdi Ghorbani-Asl, Shengqiang Zhou, Arkady V Krasheninnikov, and Feng Chen |
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Mon, 15:00 | DS 9.1 | MBE growth of є-Ga2O 3 by using a Sn catalyst-layer — •Alexander Karg, Max Kracht, Sebastian Benz, Fabian Michel, Marcus Rohnke, Stephan Figge, Jörg Schörmann, Marco Schowalter, Jürgen Janek, Andreas Rosenauer, and Martin Eickhoff |
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Mon, 15:15 | DS 9.2 | Influence of surface modification on electrochemical performance of Ni-rich NCM cathodes for Lithium ion batteries — •Rajendra Singh Negi and Matthias T. Elm |
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Mon, 15:30 | DS 9.3 | Epitaxial growth of SrTiO3 thin films by MOVPE — •Aykut Baki, Julian Stöver, Klaus Irmscher, Toni Markurt, Martin Albrecht, and Jutta Schwarzkopf |
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Mon, 15:45 | DS 9.4 | Cu- and Mn-doping in ferroelectric K0.5Na0.5NbO3 epitaxial films grown by PLD — •Daniel Pfützenreuter, Martin Schmidbauer, Julian Stöver, Klaus Irmscher, Detlef Klimm, and Jutta Schwarzkopf |
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Mon, 16:00 | DS 9.5 | Ion-beam sputtered oxide buffer layers as a viable alternative to thin films grown with atomic layer deposition — •Martin Becker, Florian Kuhl, Philip Klement, Angelika Polity, Jörg Schörmann, Peter J. Klar, and Sangam Chatterjee |
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Mon, 16:15 | DS 9.6 | Correlation between sputter deposition parameters and I-V curves in memristive devices — •Finn Zahari, Sven Gauter, Julian Strobel, Julia Cipo, Felix Georg, Thomas Mussenbrock, Lorenz Kienle, Holger Kersten, and Hermann Kohlstedt |
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Mon, 16:45 | DS 10.1 | Switching behaviour of epitaxial Ge2Sb2Te5 thin films — •Mario Behrens, Andriy Lotnyk, Jürgen W. Gerlach, and Bernd Rauschenbach |
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Mon, 17:15 | DS 10.3 | Phonon modes and thermal conductivity in Si/SiO2 multishell nanotubes — C. I. Isacova, A. I. Cocemasov, D. L. Nika, O. G. Schmidt, and •V. M. Fomin |