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Bonn 2020 – wissenschaftliches Programm

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T: Fachverband Teilchenphysik

T 110: Combined instrumentation session IV: Semiconductor detectors (joint session HK/T)

T 110.2: Vortrag

Freitag, 3. April 2020, 11:15–11:30, H-HS XV

Temperature Scaling of Leakage Current in Irradiated Silicon Sensors — •Felix Wizemann, Kevin Kröninger, and Jens Weingarten — TU Dortmund, Experimentelle Physik IV

The leakage current of silicon sensors increases with radiation damage, which can be used to monitor fluence. For this, the bulk leakage current needs to be scaled with temperature using the parameter Eeff. In previous studies, this parameter was determined to be 1.21 eV for samples irradiated to fluences up to 1 × 1015 neq cm−2. Sensors irradiated to higher fluences have shown lower values of Eeff.

To investigate this change in scaling behaviour, Eeff  was determined as a function of the applied bias voltage for irradiated samples with fluences from 1 × 1014 neq cm−2 to 3 × 1015 neq cm−2. Results of this study are presented in this talk.

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