Dresden 2020 – wissenschaftliches Programm
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CPP 86.7: Vortrag
Donnerstag, 19. März 2020, 11:00–11:15, ZEU 260
High-Speed and High-Current Vertical Organic Transistors — •Felix Dollinger1, Kyung-Geun Lim2, Axel Fischer1, Petr Formánek3, Hans Kleemann1, and Karl Leo1 — 1Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Dresden, Germany — 2Korea Research Institution for Standard Science (KRISS), Daejeon, Korea — 3Leibniz-Institut für Polymerforschung Dresden e. V. (IPF), Dresden, Germany
The Organic Permeable Base Transistor (OPBT) is a vertical organic transistor design allowing for very high current densities, and hence the fastest operating speed of all organic transistors with transit frequency reaching 40 MHz. The modulation of current in such a device is achieved by a thin aluminum base electrode, corresponding to the gate in a conventional field effect transistor. This base layer is located in the center of the vertical stack and is permeable for electrons.
Using an improved fabrication technique of the base layer, we show OPBTs with excellent properties. Specifically, the devices show very large current gain and reduced parasitic leakage currents. This has been achieved by applying electrochemical anodization to the base layer, which most interestingly, can be carried out atop of the organic semiconductor layer without compromising the transistor performance [Dollinger et al., Advanced Materials, 2019].
In addition, we investigate the behavior of OPBTs under electrical stress, which helps to understand the suitability of these transistors for long-time real-life applications [Dollinger et al., Advanced Electronic Materials, 2019].