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DS: Fachverband Dünne Schichten
DS 18: Transport Properties
DS 18.2: Vortrag
Dienstag, 17. März 2020, 12:00–12:15, CHE 89
Layer by Layer Resistive Switching — •Jon-Olaf Krisponeit1,3, Bernd Damaschke2, Vasily Moshnyaga2, and Konrad Samwer2 — 1Institute of Solid State Physics, University of Bremen, 28359 Bremen, Germany — 2I. Physikalisches Institut, Georg-August-Universität Göttingen, 37077 Göttingen, Germany — 3MAPEX Center for Materials and Processes, University of Bremen, 28359 Bremen, Germany
Beyond their complex magneto-resistive transport behavior, perovskite manganites have been shown to exhibit also memristive properties. Employing conductive atomic force microscopy (CAFM) on a La0.85Sr0.15MnO3 thin film on MgO(100), we reveal a novel resistive switching mechanism which is based on the electric-field-induced healing of so-called "dead" layers.[1]
Under application of an electrical bias, these layers of highly resistive nature are switched to a bulk-like, conducting state. The switching process can be reversed by voltage pulses of the opposite polarity. Proceeding in a layer-by-layer fashion, the effect allows for multi-state functionality: The variable number of insulating layers, sandwiched between the conductive bulk and the cantilever tip, results in an electrically tunable tunnel barrier with multiple well-defined resistance states.
Financial support from the DFG via SFB 602, SFB 1073 and the Leibniz program, and by the Institutional Strategy of the University of Bremen, funded by the German Excellence Initiative, is acknowledged.
[1] Krisponeit et al., Phys. Rev. Lett. 122, 136801 (2019).