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DS: Fachverband Dünne Schichten
DS 21: Layer Properties I: Electronic Properties
DS 21.1: Vortrag
Mittwoch, 18. März 2020, 09:30–09:45, CHE 91
Band structures of HgTe films from the cyclotron resonance — •Jan Gospodaric1, Alexey Shuvaev1, Vlad Dziom1, Alena Dobretsova2, Nikolay Nikolaevich Mikhailov2, Ze Don Kvon2, Elena Novik3,4, and Andrei Pimenov1 — 1Institute of Solid State Physics, Vienna University of Technology, 1040 Vienna, Austria — 2Rzhanov Institute of Semiconductor Physics and Novosibirsk State University, Novosibirsk 630090, Russia — 3Institute of Theoretical Physics, Technische Universität Dresden, 01062 Dresden, Germany — 4Dresden High Magnetic Field Laboratory (HLD-EMFL), Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden, Germany
An essential part of understanding the properties of materials is knowing their band structure. One of the most standardized methods to acquire the band structure of solids is provided by angle-resolved photoemission spectroscopy (ARPES), which provides access to the electronic structures of the area close to the surface of the sample (typical depths in Ångström range). However, in 2D heterostructures, additional buffer and capping layers limit this procedure. Here we present the results of an alternative method to obtain the band dispersion of such samples by probing the cyclotron resonance of the free carriers in thin films based on the HgTe. With the presented technique we can map both the electron and hole part of the band structures of HgTe films in semimetallic and topological insulating phases. The resulting band pictures overlap well with the theoretical results, provided by the k· p model.