Dresden 2020 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 22: 2D semiconductors and van der Waals heterostructures V (joint session HL/DS/O)
DS 22.8: Vortrag
Mittwoch, 18. März 2020, 11:45–12:00, POT 81
Selectively grown Topological Insulator Nanodevices — •Daniel Rosenbach1, Abdur Rehman Jalil1, Jonas Kölzer1, Nico Oellers1, Michael Schleenvoigt1, Tobias Werner Schmitt2, Peter Schüffelgen1, Gregor Mussler1, Hans Lüth1, Detlev Grützmacher1, and Thomas Schäpers1 — 1Peter Grünberg Institut (PGI-9) and JARA-Fundamentals of Future Information Technology, Jülich-Aachen Research Alliance, Forschungszentrum Jülich, 52425 Jülich, German — 2JARA-FIT Institute Green IT, RWTH Aachen University, 52062 Aachen, Germany
1-dimensional topological insulator nanoribbons in close proximity to elemental superconductors can be utilized to create localized Majorana modes for topological quantum computation architectures. We employ a selective area growth method using molecular beam epitaxy in order to define topological insulator nanodevices without harmful post processing steps. Using the transmission line method the interface of Bi2Te3 nanorribons towards ex situ applied Ti/Au contacts is probed at low temperatures. Furthermore, magnetotransport measurements on nano-Hallbars of down to 50 nm wide Bi2Te3 nanoribbons show indications of highly mobile charge carriers originating from 2-dimensional, topological surfaces. Finally, making use of a stencil mask on-chip, elemental superconductors like Nb and Al are deposited to define in situ, lateral topological Josephson junctions. Superconducting properties of proximitized topological nanoribbons are presented and discussed.