Dresden 2020 – wissenschaftliches Programm
Die DPG-Frühjahrstagung in Dresden musste abgesagt werden! Lesen Sie mehr ...
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
DS: Fachverband Dünne Schichten
DS 27: Focus Session: Functional Metal Oxides for Novel Applications and Devices I (joint session HL/DS)
DS 27.4: Vortrag
Mittwoch, 18. März 2020, 16:00–16:15, POT 81
Epitaxial growth of La doped BaSnO3 thin films by Plasma-assisted molecular beam epitaxy — •Georg Hoffmann1, Martina Zupancic2, Martin Albrecht2, Zbigniew Galazka2, and Oliver Bierwagen1 — 1Paul-Drude-Institut für Festkörperelektronik Leibniz-Institut im Forschungsverbund Berlin e.V. — 2Leibniz-Institut für Kristallzüchtung
For oxide molecular beam epitaxy (MBE), the use of suboxides is an essential part for the growth of complex oxides, e.g. SnO for BaSnO3 (BSO). However, the conventional approach of BSO growth using SnO suboxide from a SnO2 charge (SnO + Ba + 2O → BaSnO3) requires high cell temperatures and adds a parasitic oxygen background due to the reaction SnO2 → SnO + 1/2 O2. Using a SnO2 + Sn mixture as a charge can address both issues, first: the suppression of the parasitic oxygen due to the reaction SnO2 + Sn → 2 SnO and second: providing higher fluxes at lower temperatures.
Using this new approach, smooth BSO films were grown by plasma-assisted MBE on SrTiO3 (STO) substrates. The crystal quality was analyzed in-situ by reflective high energy electron diffraction. Ex-situ, morphology and structural parameters were determined by atomic force microscopy, X-ray diffraction, and high resolution transmission electron microscopy images.
The results reveal an increased BSO growth-temperature window with decreasing SnO/Ba flux ratio. Further, the influence of the STO miscut angle, as well as the STO orientation will be discussed, and electrical properties of La doped BSO films are pointed out.