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DS: Fachverband Dünne Schichten
DS 36: Thin Oxides and Oxide Layers I (joint session DS/HL/O)
DS 36.3: Vortrag
Donnerstag, 19. März 2020, 10:00–10:15, CHE 91
Optoelectrical properties of VO2 ultra-thin films — •Maximilian Obst1, Laura Rodríguez2, Gustau Catalan2,3, Susanne C. Kehr1, and Lukas M. Eng1,4 — 1Institute of Applied Physics, Technische Universität Dresden, Germany — 2Institut Catalá de Nanociéncia i Nanotecnologia and The Barcelona Institute of Nanoscience and Technology, Campus UAB, Barcelona, Catalonia — 3ICREA-Institució Catalana de Recerca i Estudis Avançats, Barcelona, Catalonia — 4ct.qmat: Dresden-Würzburg Cluster of Excellence - EXC 2147, Technische Universität Dresden, Germany
Vanadium dioxide (VO2) is a material that is in the central research focus due to its metal-to-insulator phase transition (MIT) at room temperature. Experimentally, this temperature-regime is easily accessible, and hence allows profound MIT-studies while dreaming of interesting applications, such as phase-change memories. Although thicker VO2 films are intensively investigated, the properties and physical behavior of ultrathin VO2 layers are far from being understood.
In this work, an epitaxial VO2-film of 10 nm grown on a rutile(001) single-crystal is explored, applying a broad set of electrical and optical methods. While Raman-spectroscopy revealed no structural phase transition of the film, electrical transport measurements as well as spectrally-resolved (UV to mid-IR) reflectivity measurements clearly show the MIT at .17ex∼300 K. In conclusion, the structural and electrical phase transition seems to be completely disentangled in these ultrathin films. However, thin VO2-films might easily oxidize to V2O5, as was indicated by measuring the vanadium 2p3/2-peak using XPS.