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DS: Fachverband Dünne Schichten
DS 43: Thin Film Properties: Structure, Morphology and Composition II
DS 43.1: Vortrag
Donnerstag, 19. März 2020, 16:45–17:00, CHE 89
Growth and electronic structure of hexagonal BN on a curved Rh(111) crystal — •Khadiza Ali1, Laura Fernandez1, Anna Makarova2, Igor Piš3, Federica Bondino3, Enrique Ortega1, and Fredrick Schiller1 — 1Centro de Física de Materiales (CSIC-UPV/EHU), 20018, San Sebastian, Spain — 2Institut für Festkörperphysik, TU Dresden, D-01069 Dresden, Germany — 3Elettra Sincrotrone Trieste, Strada Statale 14 Km 163.5, I-34149 Trieste, Italy
Understanding the growth of a hexagonal boron nitride (h-BN) monolayer has gained interest in the scientific community owing to its many-sided impact in the field of two-dimensional materials. We have investigated the growth and electronic structure of h-BN on vicinal rhodium surfaces in a systematic manner, using a crystal curved around the (111) face. While at the flat Rh(111) h-BN forms the *nanomesh* structure due to the lattice mismatch and strong chemical interaction to the substrate, h-BN on Rh vicinal surfaces leads to substrate faceting with well-ordered step arrays, that is, in a slightly different way as on vicinal Ni . Using STM we observe nanoribbons with hole and wire regions at the (111) facets that are separated by multiple steps. The electronic structure (using XAS, XPS and ARPES) reveals that the interaction of h-BN and the substrate gets stronger for densely stepped Rh substrates, contrary to nickel . For large vicinal angles α >10∘, the (111) facets are too short for establishing the nanomesh and a stable side facet emerges tilted by approx. α=23∘ with respect to the Rh(111). ARPES measurements finds characteristic h-BN bands for this stable nanofacet.