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DS: Fachverband Dünne Schichten
DS 43: Thin Film Properties: Structure, Morphology and Composition II
DS 43.3: Vortrag
Donnerstag, 19. März 2020, 17:15–17:30, CHE 89
Investigation of thin boron layers on silicon (PureB) by means of x-ray photoelectron spectroscopy (XPS) — •Annika Stefanie Burkowitz1, Marie Schmitz1, Lukas Kesper1, Ulf Berges1, Stefan Dreiner2, Daniel Weier2, Lis Karen Nanver3, and Carsten Westphal1 — 1DELTA/Experimentelle Physik I, TU Dortmund, Maria-Goeppert-Mayer-Straße 2, 44221 Dortmund, Germany — 2Fraunhofer Institute for Microelectronic Circuits and Systems, Finkenstr. 61, 47057 Duisburg, Germany — 3University of Twente, Drienerlolaan 5, 7522 NB Enschede, The Netherlands
We present an investigation of thin pure boron layers (PureB) on silicon. The name PureB was introduced in order to distinguish pure boron layers that lie on top of the substrate from boron doped into the substrate.
PureB systems yield excellent results regarding detection of ultraviolet light and low-energy electrons. The required extremly shallow pn-junctions can be fabricated by growing a few nanometers thick boron layer to ultra-pure silicon substrate wafers. Detectors using the PureB technology show a sensitivity close to the theoretical limit and a good robustness as well as an exceptionally low leakage current.
These outstanding properties are associated with the boron-silicon interface. Therefore, the aim of this research is to analyze the interface between the silicon substrate and the boron adsorbate by means of x-ray photelectron spectroscopy (XPS). XPS studies reveal information about chemical bonding types present in the boron layer and about the composition of the surface.