DPG Phi
Verhandlungen
Verhandlungen
DPG

Dresden 2020 – wissenschaftliches Programm

Die DPG-Frühjahrstagung in Dresden musste abgesagt werden! Lesen Sie mehr ...

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

DS: Fachverband Dünne Schichten

DS 43: Thin Film Properties: Structure, Morphology and Composition II

DS 43.5: Vortrag

Donnerstag, 19. März 2020, 17:45–18:00, CHE 89

Low-temperature growth of Ga2O3 thin films by PEALD — •Ali Mahmoodinezhad1, Christoph Janowitz1, Franziska Naumann2, Paul Plate2, Hassan Gargouri2, Karsten Henkel1, and Jan Ingo Flege11Applied Physics and Semiconductor Spectroscopy, Brandenburg University of Technology Cottbus-Senftenberg, K.-Zuse-Str. 1, 03046 Cottbus, Germany — 2SENTECH Instruments GmbH, Schwarzschildstraße 2, 12489 Berlin, Germany

Thin films of gallium oxide (Ga2O3) were deposited on silicon (100) through plasma-assisted atomic layer deposition with alternating supply of trimethylgallium and oxygen plasma at low substrate temperatures of 80 to 200 C. The optical and electrical properties as well as the chemical composition of the Ga2O3 films were investigated by spectroscopic ellipsometry (SE), capacitance-voltage (C-V) measurements, and X-ray photoelectron spectroscopy (XPS) documenting the high quality of the films. A constant growth rate of ∼0.66 Å per cycle accompanied by a low inhomogeneity of ≤2% was determined from the SE data for all temperatures. We found a temperature-independent refractive index (1.86±0.01 at 632.8 nm) whereas the optical bandgap decreased with increasing temperature (from 4.68 to 4.57 eV). XPS analysis revealed an almost ideal Ga:O ratio of 2:3 for all temperatures, with the lowest carbon contamination (∼10%) for deposition at 150 C. Furthermore, from the C-V data a permittivity of 9.7±0.2 (at 10 kHz) as well as fixed and mobile oxide charge densities in the order of 1 to 4×1012 cm−2 were deduced.

100% | Mobil-Ansicht | English Version | Kontakt/Impressum/Datenschutz
DPG-Physik > DPG-Verhandlungen > 2020 > Dresden