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DS: Fachverband Dünne Schichten
DS 8: Layer Deposition I: Inorganic Thin Films
DS 8.2: Vortrag
Montag, 16. März 2020, 15:15–15:30, CHE 89
Optical temperature management for high-quality ZnO molecular beam epitaxy — •Maximilian Albert1, Christian Golla1, Christian Kaspari2, Thomas Zettler2, and Cedrik Meier1 — 1Department Physik, Universität Paderborn, 33098 Paderborn, Germany — 2LayTec AG, Seesener Str. 10-13, 10709 Berlin, Germany
Zinc oxide is a wide gap semiconductor with a high exciton binding energy and significant nonlinear susceptibility. ZnO grown by molecular beam epitaxy (MBE) has already been used in various photonic or plasmonic structures taking advantage of those properties. For these structures the crystal quality is of great importance, which crucially depends on growth parameters, such as growth rate and substrate temperature. Both parameters are challenging to manage and analyze in-situ due to the non-opaque substrates and films. Therefore, novel techniques have to be researched and investigated. In our case we investigate a combined optical approach, promising insights into both growth temperature and growth rate of ZnO. We find that emissivity-corrected pyrometry together with band gap thermometry and reflectometry can address all needs and substantially improves quality control and monitoring of the growth process.