Dresden 2020 – wissenschaftliches Programm
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HL 24.3: Vortrag
Dienstag, 17. März 2020, 10:15–10:30, POT 151
Preparation of MgxZn1−xO Photoanodes for Increased Photovoltage in Dye-sensitized Solar Cells — •Andreas Ringleb1, Tsukasa Yoshida2, and Derck Schlettwein1 — 1Justus Liebig University Gießen, Institute of Applied Physics — 2Yamagata University (Yonezawa, Japan), Graduate School of Science and Engineering
ZnO is an n-type semiconductor and a promising candidate for applications in various types of optoelectronic devices due to its wide direct bandgap of about 3.3 eV and a high electron mobility. The targeted substitution of Zn with magnesium enables a tunable band gap of MgxZn1−xO in the ZnO wurtzite structure between 3.3 and 4.0 eV through control of the Mg-content. The tunability of the bandgap can be used to minimize losses during electron injection in dye-sensitized solar cells (DSCs). MgxZn1−xO nanoparticles have been prepared from acetate precursors in ethanol through a wet chemical route. Thin films have been deposited on quartz and FTO-coated glass substrates by screen-printing of pastes and subsequent annealing. SEM has been used to study the morphology of these films, while XRD was used to detect changes in the crystal lattice caused by Mg. The modulation of the band gap has been confirmed by UV-Vis spectroscopy. A focus has been put on the homogeneity and porosity of the resulting films. DSCs were prepared and analyzed to investigate the effect of the shifted band edge on the solar cell characteristics.