Dresden 2020 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 49: Quantum dots and wires II
HL 49.1: Talk
Wednesday, March 18, 2020, 15:00–15:15, POT 151
Charge tuning of GaAs quantum dots using Schottky diode structure — •Nand Lal Sharma1, Robert Keil1, Caspar Hopfmann1, Fei Ding2, and Oliver Schmidt1,3 — 1Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstrasse 20, 01069 Dresden, Germany — 2Institut für Festkörperphysik, Leibniz Universität Hannover, Appelstrasse 2, 30167 Hannover, Germany — 3Chemnitz University of Technology, Reichenhainer Strasse 70, 09107 Chemnitz, Germany
Semiconductor quantum dots (QDs) are promising candidates for high quality photon sources and the biexciton cascade decay in such dots is most advanced technique for the generation of entangled photon pairs. In this work the GaAs/AlGaAs QDs are grown by droplet epitaxy [1] employing a n-i Schottky diode structure. The back contact is prepared by thermal diffusion and the top contact is prepared by deposition of semi-transparent 2 and 4nm Cr and Au, respectively. The GaAs QD photoluminescence from different charging states is controlled by application of an external bias. The effects of quantum dot charging, quantum confined Stark effect, exciton fine structure and photon coherence are investigated as a function of bias voltage.
[1] Keil et. al. Nat. comm. 8, 15501(2017)