Dresden 2020 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 62: Focus Session: Functional Metal Oxides for Novel Applications and Devices II (joint session HL/DS)

HL 62.4: Vortrag

Donnerstag, 19. März 2020, 10:30–10:45, POT 81

Investigations of β-Ga2O3(100) cleavage surfaces by scanning tunneling microscopy and spectroscopy — •Celina Seraphin Schulze1, Jonathan Hofmann1, Christian Bruckmann1, Martin Franz1, Zbigniew Galazka2, Wjatscheslav Martyanov1, and Holger Eisele11Technische Universität Berlin, Institut für Festkörperphysik, Berlin, Germany — 2Leibniz-Institut für Kristallzüchtung (IKZ), Berlin, Germany

We present surface investigations of three differently doped β-Ga2O3 crystals by scanning tunneling microscopy and spectroscopy. One sample is unintentionally doped, while both others are doped by Si and Sn. All the bulk β-Ga2O3 single crystals were grown from the melt by the Czochralski method [1,2] and cleaved in situ under a base pressure below 1×10−8 Pa for experimental investigation. On the flat β-Ga2O3(100) cleavage surfaces of each sample dark contrasts occur that can be partially assigned to unintentional background doping by Si. By low energy electron diffraction measurements on the β-Ga2O3(100) surfaces we observed an unreconstructed surface with a 1×1 diffraction pattern. Scanning tunneling spectra show intrinsic electronic states within the band gap, induced most likely by oxygen vacancies. This project was supported by the Leibniz Association, Leibniz Science Campus GraFOx, project C2-3.

[1] Z. Galazka et al., ECS J. Solid State Sci. Technol. 6, Q3007 (2017)

[2] Z. Galazka et al., J. Crystal Growth 529, 125297 (2020)

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