Dresden 2020 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 64: Poster II
HL 64.8: Poster
Thursday, March 19, 2020, 10:00–13:00, P1A
Characterization of the charge carrier transport in single GaN nanowire field-effect transistors — •Hannes Hergert1,2, Patrick Uredat1,2, Matthias T. Elm1,2,3, and Peter J. Klar1,2 — 1Center for Materials Research, Justus Liebig University, 35392 Giessen, Germany — 2Institute of Experimental Physics I, Justus Liebig University, 35392 Giessen, Germany — 3Institute of Physical Chemistry, Justus Liebig University, 35392 Giessen, Germany
In the field of semiconductor technology the classical transistors are close to the limit of miniaturisation set by the laws of thermodynamics. For further optimisation new methods are necessary. Due to their high electron mobility and direct bandgap gallium nitride nanowires are a promising material system for future nanoelectronic applications, such as nanowire field-effect transistors (NWFETs). For the device realisation the electrical transport characteristics of such NWFETs need to be investigated. We prepared field-effect transistors of single nanowires by a combination of photo- and electron-beam lithography and characterized the transport properties of single GaN-nanowires. Their electrical resistance increases linearly with decreasing temperature, which is attributed to the high doping concentration and an associated activation energy. We determined the carrier concentration and the electron mobility from cryogenic temperatures to room temperature.