Dresden 2020 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 66: Thin Oxides and Oxide Layers II (joint session DS/HL)

HL 66.4: Vortrag

Donnerstag, 19. März 2020, 11:45–12:00, CHE 91

Fast sweep and voltage pulse studies on HfO2/TiO2- bilayer resistive switching memories — •Nils Quiring1, Felix Cüppers1, Alexander Hardtdegen1, Susanne Hoffmann-Eifert1, and Rainer Waser1,21PGI-7, Forschungszentrum Jülich GmbH, Germany — 2IWE-2, RWTH Aachen University, Germany

Redox-based resistive random access memories (ReRAM) are promising contenders for future information technology applications. Compared to the respective monolayers, bilayer oxide stacks of HfO2/TiO2 revealed enhanced switching stability [1]. Yet, the origin of this stability is not fully understood. The inherent variability of properties such as the resistance states, switching voltages and times need further investigation.

In this study, bilayer oxide stacks of HfO2/TiO2 sandwiched between a Pt and a Ti electrode are electrically characterized by voltage sweep and pulse measurements. The switching behavior at different voltages, durations and signal waveform geometries with a current limitation is examined. Cells during switching are characterized with respect to cycle to cycle and device to device variability.

[1] A. Hardtdegen et al., " Improved Switching Stability and the Effect of an Internal Series Resistor in HfO2/TiO2 Bilayer ReRAM Cells " IEEE TED, vol. 65, 8, 2018, pp. 3229-3236.

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