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KFM: Fachverband Kristalline Festkörper und deren Mikrostruktur

KFM 17: Microstructure, Real Structure and Crystal Defects

KFM 17.1: Vortrag

Freitag, 20. März 2020, 09:30–09:50, TOE 317

Emitter-Site Specificity of Hard X-ray Photoelectron Kikuchi-Diffraction — •Olena Fedchenko¹, Aimo Winkelmann², Sergey Chernov¹, Katerina Medjanik¹, Sergey Babenkov¹, Steinn Agustsson¹, Dmitry Vasilyev¹, Moritz Hoesch³, Hans-Joachim Elmers¹, and Gerd Schönhense¹ — ¹JGU, Institut für Physik, Mainz, Germany — ²ACMiN, AGH University of Science and Technology, Krakow, Poland — ³DESY Photon Science, Hamburg, Germany

High-resolution full-field imaging of (k_x,k_y) photoelectron distributions (angular resolution 0.03^∘) in a large field of view (up to 20 Å⁻¹ dia.) gives access to subtle details in Kikuchi-type diffractograms [1]. This method opens a new avenue to structural analysis via hard X-ray Photoelectron Diffraction (hXPD). We present a theoretical study of the emitter-site specificity by simulating hXPD patterns for arbitrary positions of emitter atoms in the unit cell. Using the Bloch wave approach to photoelectron diffraction from lattice planes [2], the diffraction patterns from an arbitrary number of positions in the unit cell can be obtained simultaneously making use of the reciprocity theorem. Simulations for emitter atoms at various positions in the unit cell of silicon reveal surprisingly strong changes (despite the fact that the entire lattice is kept fixed). The results are compared with measurements for Si doped with Te using ion-implantation [3].

[1] O. Fedchenko et al., New J. of Phys, 21,113031 (2019); [2] A. Winkelmann et al., New J. of Phys. 10, 113002 (2008); [3] M. Hoesch et al., this conference.