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Dresden 2020 – wissenschaftliches Programm

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MA: Fachverband Magnetismus

MA 54: Spin: Transport, Orbitronics and Hall Effects II

MA 54.3: Vortrag

Donnerstag, 19. März 2020, 15:30–15:45, HSZ 403

Phenalenyl-based Organic Barriers for Tunnel Junctions — •Neha Jha1, Christian Denker1, Anand Pariyar2, Pavan K. Vardhanapu2, Heba S. Mohamad1, Amir Azinfar1, Arne Ahrens3, Ulrike Martens1, Christiane A. Helm1, Michael Seibt3, Swadhin K. Mandal2, and Markus Münzenberg11Institut für Physik, Universität Greifswald, Germany — 2Department of Chemical Sciences, IISER, Kolkata, India — 3IV. Physikalisches Institut, Universität Göttingen, Germany

Phenalenyl (PLY) based molecules are appealing for spintronics as demonstrated by the formation of a spinterface, showing tunnel magneto-resistance close to room temperature [1].

Here, we compare different kinds of molecules (PLY, ZMP, PLY-Cu[2]) as barrier material. In addition, we introduce a new 3-D shadow mask technology allowing for junction sizes down to 3x6 µ m2. AFM and TEM imaging indicate sharp interfaces. Consequently, the current depends non-linearly on the voltage. The resistance depends exponentially on the barrier-thickness and shows no significant temperature dependence. This evidences tunneling as conduction mechanism. Magneto-resistive characteristics appear applying a few mV, while memristive properties require voltages in the volt range. Memristive resistance changes up to a factor of 2 are found for all three types of PLY, while magneto-resistive changes differ for the types of molecules and can also be as high as a factor of 2.

[1] K. V. Raman et al., Nature 493, p. 509 (2013)

[2] A. Mukherjee et al., J. Chem. Sci., 123, p. 139 (2011)

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