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MM: Fachverband Metall- und Materialphysik

MM 18: Poster Session I

MM 18.22: Poster

Montag, 16. März 2020, 18:15–20:00, P4

Electronic and Optical Properties of Bismuthene on a SiC Substrate — •Armando Consiglio and Domenico Di Sante — Institut für Theoretische Physik und Astrophysik, Universität Würzburg, 97074 Würzburg, Germany

The work focuses on the study of the electronic and optical properties of a material based on a monolayer of Bismuth atoms in an honeycomb structure, known as Bismuthene, supported by an insulating Silicon Carbide (0001) bilayer substrate that stabilizes the system and that contributes to the electronic properties. As the high atomic number of Bismuth atoms leads to an high Spin-Orbit Coupling, and so to large values of the energy gap, this material is promising in the framework of the Quantum Spin Hall systems. Here we show our results based on first principles calculations, obtained via Density Functional Theory and GW methods, and we compare them with experimental results.