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MM: Fachverband Metall- und Materialphysik
MM 30: Poster Session II
MM 30.17: Poster
Dienstag, 17. März 2020, 18:15–20:00, P4
Comparison and analysis of ultra-narrow gaps fabricated by electron and helium ion beam lithography — Hao HU1,2, Monika Fleischer2, and •Pierre-Michel Adam1 — 1Universite de Technologie de Troyes, 12 Rue Marie Curie, CS42060, 10004 Troyes Cedex, France — 2Institute for Applied Physics and Center LISA+, Eberhard Karls University Tübingen, Auf der Morgenstelle 10, 72076 Tübingen, Germany
Metal nanostructures with ultra-narrow gaps, which enable strong field enhancements in plasmonic structures, have attracted widespread attention in physics, chemistry, and biology. However, fabricating ultra-narrow nanogaps is still challenging at present, and controllable gap size, accurate dimensions, and scalable fabrication are desired for further applications. The most common methods for fabricating nanogaps arrays are electron beam lithography (EBL) and focused ion beam (FIB) milling. Depending on the difference of cross-linking reaction and degradation reaction occurring under the electron beam, the photoresist can be classified into two types: positive tone and negative tone. FIB can be divided into He-ion and Ga-ion beam depending on the ion source used. In this study, we provide a comparison of nanostructures fabricated with different methods including different types of EBL and FIB. By varying the fabrication methods of the nanostructures, we aim to find optimized approaches for fabricating ultra-narrow nanogaps.