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O: Fachverband Oberflächenphysik
O 2: Heterostructures, interfaces and surfaces (joint session HL/O)
O 2.4: Vortrag
Montag, 16. März 2020, 10:15–10:30, POT 151
Effect of KF and RbF post-deposition treatments on the electronic structure of the CdS/Cu(In,Ga)Se2 interface in thin-film solar cells investigated by Kelvin Probe and Photoelectron Yield Spectroscopy — •Marin Rusu1, Tim Kodalle2, Leo Choubrac1, Sergiu Levcenco1, Nicolas Barreau3, Christian Kaufmann2, Rutger Schlatmann2, and Thomas Unold1 — 1Struktur und Dynamik von Energiematerialien, Helmholtz-Zentrum Berlin für Materialien und Energie, Lise-Meitner Campus, Hahn-Meitner-Platz 1, 14109 Berlin, Germany — 2PVcomB, Helmholtz-Zentrum Berlin für Materialien und Energie, Schwarzschildstr. 3, 12489 Berlin, Germany — 3Institut des Matériaux Jean Rouxel (IMN)-UMR6502, Université de Nantes, 2 rue de la Haussinière, 44322 Nantes Cedex 3, France
We investigate the impact of potassium fluoride (KF) and rubidium fluoride (RbF) post-deposition treatments on electronic features of the Cu(In,Ga)Se2 (CIGSe) layer and CdS/CIGSe interface in a sequential time-dependent CdS thickness evolvement over the chemical bath deposition (CBD) process. Kelvin Probe and Photoelectron Yield Spectroscopy methods have been employed. Although we observe similarities with the reported data, we observe additional distinct features. We find that after an initial CBD stage the valence band maximum of the CIGSe surface is significantly shifted (by 180-620 mV) towards the Fermi level. In addition, K and Rb act as compensating dopants in CdS. Energy level diagrams are proposed and discussed.