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O: Fachverband Oberflächenphysik
O 22: Poster Session - 2D Materials Beyond Graphene: Growth, Structure and Substrate Interaction
O 22.6: Poster
Montag, 16. März 2020, 18:15–20:00, P1A
Growth and characterization of WS2 on epitaxial graphene on SiC(0001) — •Adrian Schütze, Philip Schädlich, Constance Schmidt, Florian Speck, Dietrich R. T. Zahn, and Thomas Seyller — Institute of Physics, TU Chemnitz, Chemnitz, Germany
2D materials such as, for example, graphene, hexagonal boron nitride or transition metal dichalcogenides have recently received much interest as building blocks for electronic devices. For a successful integration of these materials, scalable growth methods are essential. Here we investigate the growth of WS2 by metal organic molecular beam epitaxy (MOMBE) [1] on epitaxial graphene on SiC(0001). In that process W(CO)6 is used as a precursor in conjunction with sulfur vapor produced by decomposition of FeS2 in a thermal evaporator. Using MOMBE we were able to grow ultra-thin films of WS2 on epitaxial graphene which were characterized by a combination of X-ray photoelectron spectroscopy (XPS), angle resolved photoemission spectroscopy (ARPES), low-energy electron diffraction and microscopy (LEED, LEEM), atomic force microscopy (AFM) and Raman spectroscopy. The ultra-thin films, which had thicknesses between one and two monolayers, were observed to consist of triangular domains. We discuss the influence of the growth parameters on the structural and electronic properties of the layers.
[1] S. Tiefenbacher et al., Surf. Sci. 318 (1994) L1161.