Dresden 2020 – scientific programme
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O: Fachverband Oberflächenphysik
O 3: 2D semiconductors and van der Waals heterostructures I (joint session HL/DS/O)
O 3.10: Talk
Monday, March 16, 2020, 12:15–12:30, POT 81
In-plane anisotropy of the photon-helicity induced linear Hall effect in few-layer WTe2 — •Simon Steinhauser1,2, Paul Seifert1,2, Florian Sigger1,2, Jonas Kiemle1,2, Kenji Watanabe3, Takashi Taniguchi3, Christoph Kastl1,2,4, Ursula Wurstbauer1,2,5, and Alexander Holleitner1,2 — 1Walter Schottky Institut and Physics Department, Technical University of Munich, Am Coulombwall 4a, D-85748 Garching, Germany — 2Munich Center for Quantum Science and Technology (MCQST), Schellingstrasse 4, D-80799 München, Germany — 3Advanced Materials Laboratory, Tsukuba, Ibaraki 305-0044, Japan — 4Molecular Foundry, Lawrence Berkeley National Laboratory, One Cyclotron Road, Berkeley, California 94720, USA — 5Institute of Physics, University of Münster, Wilhelm-Klemm-Strasse 10, D-48149 Münster, Germany
Using Hall photovoltage measurements, we demonstrate that a linear transverse Hall voltage can be induced in few-layer WTe2 under circularly polarized illumination. We find that the photon-helicity induced Hall effect is strongly anisotropic with respect to the crystal axis. Our results are consistent with the Berry curvature and its dipolar distribution due to the breaking of inversion symmetry. We also studied how the Hall voltage changes with varying layer numbers. Time resolved optoelectronic autocorrelation spectroscopy shows the comparatively long spin lifetime of carriers caused by the momentum-indirect electron and hole pockets in WTe2.