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O: Fachverband Oberflächenphysik
O 3: 2D semiconductors and van der Waals heterostructures I (joint session HL/DS/O)
O 3.4: Vortrag
Montag, 16. März 2020, 10:15–10:30, POT 81
Excitation-induced optical nonlinearities and charge carrier localization in atomically thin TMD semiconductors — •Daniel Erben1, Alexander Steinhoff1, Michael Lorke1,2, Christian Carmesin1, Matthias Florian1, and Frank Jahnke1 — 1Institute for Theoretical Physics, University of Bremen — 2BCCMS, University of Bremen
To interpret the nonlinear optical properties of atomically thin transition metal dichalcogenides (TMD), the density of photoexcited carriers is of central importance. However, in experiments the excited carrier density is practically not accessible. For the case of above band-gap optical pumping of TMD monolayers, we utilize the semiconductor Bloch equations to determine the excitation density as function of the optical pump fluence. Our theory includes Pauli-blocking, band-gap renormalization, dephasing and screening of the Coulomb interaction due to excited carriers. The excitation density strongly depends on the wavelength of the exciting laser pulse. For pumping at the band gap, Pauli blocking of available phase space and renormalizations of the single particle energies are the dominant sources of a nonlinear density dependence, even at small pump fluence. In another study, we investigate the charge-carrier confinement in TMD nanobubbles. The latter are formed during stacking processes and exhibit quantum light emission upon optical excitation. We demonstrate that the emission originates from strong carrier localization, which is caused by the interplay of surface wrinkling, strain-induced confinement, and local changes of the dielectric environment. These effects combine to a specific localization signature that is found in recent spatially resolved photoluminescence experiments.