Dresden 2020 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 55: Poster Session - Nanostructured Surfaces and Thin Films
O 55.5: Poster
Dienstag, 17. März 2020, 18:15–20:00, P2/2OG
Real-time observation of ion-induced surface nanopatterning on crystalline Ge(001) by in-situ GISAXS — •Denise Erb1, Peco Myint2, Kenneth Lutterodt-Evans3, Karl Ludwig2, and Stefan Facsko1 — 1Helmholtz-Zentrum Dresden-Rossendorf, Germany — 2Boston University, USA — 3Brookhaven National Laboratory, USA
As a contact-less technique, GISAXS is well suited for in-situ and real-time investigation of surface self-assembly processes. We implemented a custom-made UHV sample environment for GISAXS at the ISR beamline of the NSLS-II synchrotron and observed the nanoscale pattern formation kinetics on a crystalline Ge(001) surface under ion irradiation. The Ge(001) surface is known to develop a nanoscale pit-and-mound pattern of faceted pyramidal structures under irradiation with 1 keV Ar+ ions at normal incidence. The edges of the pyramidal structures are aligned along the <100> and <010> direction, while their sidewall facets have a uniform polar tilt from the <001> direction. Such a regular surface morphology results in a GISAXS intensity distibution with distinct features. From the development of these features with ion fluence, we can conclude on the corresponding development of the surface morphology. Thereby, we directly monitor the lateral characteristic length as well as the polar facet angle as indicators of the kinetics of this ion-induced self-assembly process. The temporal development of these quantities is found to be in good agreement with results of numerical integration of the established continuum equation for surface height evolution under ion irradiation.