Dresden 2020 – wissenschaftliches Programm
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TT 25.4: Vortrag
Dienstag, 17. März 2020, 10:30–10:45, POT 6
Crystal Hall effect in an ultrathin film of SrRuO3(SRO) grown on SrTiO3(STO): A case of collinear antiferromagnetic insulator — •Kartik Samanta1, Marjana Ležaić1, Stefan Blügel1, and Yuriy Mokrousov1,2 — 1Peter Grünberg Institut and Institute for Advanced Simulation Forschungszentrum Jülich and JARA, 52425 Jülich, Germany — 2Institute of Physics, Johannes Gutenberg-University Mainz, 55128 Mainz, Germany
Motivated by the recently observed topological Hall effect in ultra-thin films of SRO grown on STO(001) substrate, we investigate the magnetic ground state and anomalous Hall response of the SRO ultra-thin films by virtue of spin density functional theory(DFT). Our findings reveal that in the monolayer limit of SRO film, large energy level splitting of Ru-t2g states, stabilizes an anti-ferromagnetic insulating magnetic ground state. For the doped insulating state, our calculated electronic transport properties based on Berry curvature analysis show a large Hall response. From the systematic investigation of our results, we find that the large Hall effect is due to a combination of broken time-reversal and crystal symmetries caused by the arrangement of non-magnetic atoms (Sr and O) in the mono-layer of SRO thin film. We identify the emergent Hall effect as a clear manifestation of the so-called crystal Hall effect  occurring in compensated antiferromagnets.
We acknowledge funding from the Deutsche Forschungsgemeinschaft (DFG) through SPP 2137 "Skyrmionics" and the Jülich Supercomputing Center(project JIFF40).
 L. Šmejkal, et al.; arXiv:1901.00445 (2019)