Dresden 2020 – scientific programme
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TT: Fachverband Tiefe Temperaturen
TT 34: Correlated Electrons: f-Electron Systems and Heavy Fermions 1
TT 34.3: Talk
Wednesday, March 18, 2020, 10:00–10:15, HSZ 204
TbRh2Si2 and TbIr2Si2: Single crystal growth and characterization — •Alexej Kraiker, Kristin Kliemt, and Cornelius Krellner — Physikalisches Institut, Goethe-Universität Frankfurt, 60438 Frankfurt am Main, Germany
In the last decades, many studies on RT2Si2 (R = rare earth, T = transition metal) ternary silicides have been made. The compounds which crystallize in the bodycentered tetragonal ThCr2Si2 structure exhibit exceptional magnetic properties such as superconductivity, valence fluctuations or the Kondo effect. In recent years, we have started to systematically investigate the magnetic properties of RRh2Si2 compounds, which present exciting surface properties, strongly influenced by the 4f-magetism [1,2]. So far, the magnetism of TbRh2Si2 and TbIr2Si2 has been studied on polycrystalline samples [3,4]. These compounds show antiferromagnetic order below TN = 92 K and TN = 84 K respectively with a magnetic ordering vector k = (001). In this contribution, we present the details of the crystal growth of single crystals of these two compounds grown by Bridgman method from indium flux. We show the results of specific heat, specific resistivity and magnetization measurements, with the focus on the magnetic transition [5].
[1] M. Güttler et al., Sci. Rep. 6, 24254 (2016)
[2] A. Generalov et al., Nano Lett. 17, 811 (2017).
[3] S. Quezel et al., Solid State Commun. 49, 7 (1984)
[4] T. Shigeoka et al., Physics Procedia, 75, 837-844 (2015)
[5] K. Kliemt et al., Cryst Res. Technol. 1900116 (2019)