Dresden 2020 – wissenschaftliches Programm
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TT 72.4: Vortrag
Freitag, 20. März 2020, 11:15–11:30, GER 37
Stacking Relations and Substrate Interaction of Graphene on Copper Foil — •Philip Schädlich1, Florian Speck1, Stiven Forti2, Camilla Coletti2, and Thomas Seyller1 — 1Technische Universität Chemnitz, Chemnitz, Germany — 2Istituto Italiano di Tecnologia, Pisa, Italy
Graphene-based device production requires graphene sheets of perfect crystallinity and low defect density on a large scale. Beyond mechanical exfoliation, where the flake size is uncontrollable, there are two promising approaches for high-quality wafer-scale graphene growth: (i) the sublimation growth on silicon carbide (SiC) by thermal decomposition of the substrate  and (ii) the chemical vapour deposition (CVD) on metal substrates such as copper .
In the present study we investigate the crystallinity of CVD grown graphene and the orientation with respect to the underlying copper foil by means of low-energy electron microscopy (LEEM) and diffraction (LEED). We find a lattice match within ± 1∘ between the graphene and the Cu(111) surface, which shows a surface facetting depending on the graphene thickness on top. Recently, stress-induced stacking domains in bi- and multilayer graphene were found for epitaxial graphene on SiC , revealing a much less homogeneous system than believed. Our LEEM dark field images and reflectivity spectra suggest a similar decomposition into domains of different stacking order for the CVD grown graphene flakes.  K. V. Emtsev et al., Nature Mater. 8, 203 (2009).  X. S. Li et al., Science 324, 1312 (2009).  T. A. de Jong et al., Physical Review Materials 2, 104005 (2018).