Dresden 2020 – wissenschaftliches Programm

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TT: Fachverband Tiefe Temperaturen

TT 72: Graphene II: Adsorption, Intercalation and Doping (joint session O/TT)

TT 72.4: Vortrag

Freitag, 20. März 2020, 11:15–11:30, GER 37

Stacking Relations and Substrate Interaction of Graphene on Copper Foil — •Philip Schädlich1, Florian Speck1, Stiven Forti2, Camilla Coletti2, and Thomas Seyller11Technische Universität Chemnitz, Chemnitz, Germany — 2Istituto Italiano di Tecnologia, Pisa, Italy

Graphene-based device production requires graphene sheets of perfect crystallinity and low defect density on a large scale. Beyond mechanical exfoliation, where the flake size is uncontrollable, there are two promising approaches for high-quality wafer-scale graphene growth: (i) the sublimation growth on silicon carbide (SiC) by thermal decomposition of the substrate [1] and (ii) the chemical vapour deposition (CVD) on metal substrates such as copper [2].

In the present study we investigate the crystallinity of CVD grown graphene and the orientation with respect to the underlying copper foil by means of low-energy electron microscopy (LEEM) and diffraction (LEED). We find a lattice match within ± 1 between the graphene and the Cu(111) surface, which shows a surface facetting depending on the graphene thickness on top. Recently, stress-induced stacking domains in bi- and multilayer graphene were found for epitaxial graphene on SiC [3], revealing a much less homogeneous system than believed. Our LEEM dark field images and reflectivity spectra suggest a similar decomposition into domains of different stacking order for the CVD grown graphene flakes. [1] K. V. Emtsev et al., Nature Mater. 8, 203 (2009). [2] X. S. Li et al., Science 324, 1312 (2009). [3] T. A. de Jong et al., Physical Review Materials 2, 104005 (2018).

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