O 33: Poster Session III: Semiconductor substrates I
Dienstag, 2. März 2021, 10:30–12:30, P
 |
10:30 |
O 33.1 |
Molecular Beam Epitaxy of InAs(111)A — •Steffen Zelzer, Rajib Batabyal, Xiaojing Zhao, Mohana Rajpalke, and Peter Krogstrup
|
|
|
|
10:30 |
O 33.2 |
Virtual III-V-on-Si substrates grown by MOVPE - reduction of stacking faults — •Manali Nandy, Agnieszka Paszuk, Markus Feifel, Christian Koppka, Peter Kleinschmidt, Frank Dimroth, and Thomas Hannappel
|
|
|
|
10:30 |
O 33.3 |
Atomic and electronic structure of the GaP/Si(001) heterointerface studied by HAXPES — •Agnieszka Paszuk, Oleksandr Romanyuk, Igor Bartoš, Regan G. Wilks, Manali Nandy, Jakob Bombsch, Claudia Hartmann, Raül Garcia-Diez, Shigenori Ueda, Ivan Gordeev, Jana Houdkova, Peter Kleinschmidt, Marcus Bär, Peter Jiříček, and Thomas Hannappel
|
|
|
|
10:30 |
O 33.4 |
Structural LEED analysis of the reconstructed Si(001) surface — •Jascha Bahlmann, Kris Holtgrewe, Simone Sanna, and Joachim Wollschläger
|
|
|
|
10:30 |
O 33.5 |
Temperature dependent adsorption of Trimethylamine (TMA) on water-functionalized Si(001)-(2x1) surfaces — •Niklas Fornefeld, Lucia Pérez Ramírez, François Rochet, Stefan Kubsky, and Ulrich Köhler
|
|
|
|
10:30 |
O 33.6 |
Enhancing structural order by random Au adsorption on the Si(553)-Au system — •Christa Fink, Kris Holtgrewe, Simone Sanna, Zamin Mamiyev, and Herbert Pfnür
|
|
|
